Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization

Robust and Power-Aware Design of CNFET-Based XOR Circuit at 16-nm Technology Node

Motivations of CMOS technology scaling are higher speed of operation, benefit of integration density and lower power dissipation. CMOS technology has crossed many hurdles over the past four decades. The aggressive technology scaling is causing device parameter variations, which is more severe than earlier. This paper carries out variability analysis of various popular exclusive-OR circuits at t...

Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach

There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore’s law beyond 22 nm technology node. Carbon nanotube based transistor (CNFET) has significant potential to replace CMOS in the future due to its better electrostatics and higher mobility. This paper presents a complete optimal design of an inverting amplifier in CMOS, CNFET a...

economic optimization and energy consumption in tray dryers

دراین پروژه به بررسی مدل سازی خشک کردن مواد غذایی با استفاده از هوای خشک در خشک کن آزمایشگاهی نوع سینی دار پرداخته شده است. برای آنالیز انتقال رطوبت در طی خشک شدن به طریق جابجایی، یک مدل لایه نازک برای انتقال رطوبت، مبتنی بر معادله نفوذ فیک در نظر گفته شده است که شامل انتقال همزمان جرم و انرژی بین فاز جامد و گاز می باشد. پروفایل دما و رطوبت برای سه نوع ماده غذایی شامل سیب زمینی، سیب و موز در طی...

Optimization of carbon nanotube ultracapacitor for cell design

Performance Optimization of CNFET-based Domino Logic circuits

-For many years VLSI Chip designers have been using Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). As the channel length of device is reducing, effects like parametric variations and increase in leakage current have caused V-I characteristics to deviate from those of traditional MOSFETs. Hence the development of devices at deep submicron retards to some extent. Carbon Nanotube Fi...